Atomistic Nanoscale Device Simulation and Its Compact Circuit Modeling

Start: 03/02/2015 - 12:00pm
End  : 03/02/2015 - 1:00pm

Applied Math Seminar

Shigeyasu Uno (Ritsumeikan University)

Metal-oxide-semiconductor field-effect-transistors (MOSFETs) are known as key semiconductor devices used in processors and memories. The size of MOSFETs has continuously been shrunk since they are commercialized several decades ago, and now the minimum device size is as small as several 10nm. In such small devices, various interesting physics emerges, such as quantum-mechanical effects, atomistic discreteness, and quasi-ballistic electron transport. Device and circuit simulations of such nanoscale MOSFETs require new modeling frameworks, and we have been working on developing them.
In this talk, I will mainly talk about compact circuit model of such nanoscale MOSFETs and its use in circuit simulation. I will also touch upon numerical device simulations based on atomistic band structures and quantum electron transport in non-equilibrium green’s function formalism. The major results are outcomes of collaboration among several universities in CREST project, Japanese government research funding scheme.
Kravis 100

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