Math modeling challenges for the nanowire transistor

When
Start: 02/01/2012 - 1:15pm
End  : 02/01/2012 - 2:15pm

Category
Applied Math Seminar

Speaker
Shigeyasu Uno (Department of Photonics, College of Science and Engineering, Ritsumeikan University Japan)

Abstract

Nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) is considered to be a promising structure for future nano-scale transistors with typical dimension of less than 10nm. In such a small device, some electrons travel through the structure without any scattering event, which is often referred to as ballistic transport. Strong electron confinement within nano-scale wire also brings about quantum mechanics. We have been working on explicit analytic expressions of current-voltage characteristics for such ballistic transistors. The final goal is to implement these analytic formulae into circuit simulators. The development requires not only physical insights of the transport phenomena, but also applied mathematics in approximation methods.

 

Where
RN 103